DocumentCode :
1015713
Title :
Low specific capacitance by ion-beam oxidation of Niobium-based Josephson tunnel junctions
Author :
Herwig, Ralf E.
Author_Institution :
Universität Karlsruhe, Hertzstrasse, Karlsruhe, West Germany.
Volume :
22
Issue :
2
fYear :
1986
fDate :
3/1/1986 12:00:00 AM
Firstpage :
124
Lastpage :
127
Abstract :
Josephson tunnel junctions were fabricated on niobium by ion-beam oxidation where an oxide thickness independent of the processing time can be achieved. Low specific capacitance of about 5 µF/ cm2at a maximum current density of 1 kA/cm2have been measured via junction and interferometer resonances. A model for the structure of those low-capacitance barriers is proposed.
Keywords :
Ion radiation effects; Josephson devices; Biomedical measurements; Capacitance measurement; Counting circuits; Current density; Electrodes; Josephson junctions; Magnetic resonance; Niobium; Oxidation; Steady-state;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1986.1064288
Filename :
1064288
Link To Document :
بازگشت