The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

Author

Grot, S.A. ; Gildenblat, Gennady Sh ; Hatfield, C.W. ; Wronski, C.R. ; Badzian, A.R. ; Badzian, T. ; Messier, Russell

Author_Institution

Pennsylvania State Univ., University Park, PA, USA

Volume

11

Issue

2

fYear

1990

Firstpage

100

Lastpage

102

Abstract

Both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD). The conductivity of the diamond film is strongly affected by the surface treatment. In particular, exposure of film surface to a hydrogen plasma results in the formation of a conductive layer which can be used to obtain linear (ohmic) I-V characteristics of the Au/diamond contacts, regardless of the doping level. It is shown how the proper chemical cleaning of the boron-doped homoepitaxial diamond surface allows the fabrication of Au-gate Schottky diodes with excellent rectifying characteristics at temperatures of at least 400 degrees C.<>

Keywords

Schottky-barrier diodes; boron; diamond; gold; plasma CVD coatings; semiconductor epitaxial layers; surface treatment; 400 degC; Au-C:B; Schottky diodes; chemical cleaning; conductive layer; doping level; electrical properties; homoepitaxial films; hydrogen plasma; linear I-V characteristics; microwave plasma-enhanced chemical vapor deposition; rectifying characteristics; surface treatment; Chemical vapor deposition; Cleaning; Conductive films; Conductivity; Doping; Gold; Hydrogen; Plasma chemistry; Plasma properties; Surface treatment;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46942

Filename

46942