Title :
High-speed and uncooled operation of 1.3-μm InGaAsP strain-compensated MQW BH lasers fabricated on patterned InP substrates
Author :
Hu, Chih-Wei ; Lee, Feng-Ming ; Peng, Te-Chin ; Ou, Tzu-Min ; Wu, Meng-Chyi ; Huang, Yin-Hsun
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
7/1/2006 12:00:00 AM
Abstract :
The fabrication and characteristics of 1.3-μm InGaAsP strain-compensated multiquantum well (SCMQW) buried heterostructure (BH) laser diodes (LDs) grown by selective metal-organic chemical vapor epitaxy on a patterned InP substrate are demonstrated. The photoluminescence (PL) of the SCMQW active region grown on the patterned grooves has a narrow full-width at half-maximum of ∼ 47 meV. The BH LDs exhibit a threshold current of 6.8 mA, a slope efficiency of 0.45 mW/mA, and a light output power exceeding 30 mW at 80 mA and 20°C. The maximum operating temperature is 120°C with a characteristic temperature of 72 K in 20°C-80°C. The 3-dB modulation bandwidth can be extended as far as 11.4 GHz under a bias level of 40 mA, and the back-to-back tests show a clear and symmetric eye diagram at 10 Gb/s with a PRBS of 231-1 word length and a peak-to-peak voltage of 1.08 V at 85°C. The average increase in operational current is smaller than 0.84% after the 1500-h aging test. The mean time of the BH LDs operated at 85°C to fail is calculated as 9×104 h. These BH LDs satisfy the reliability requirement for strict loop environment and 10-Gb Ethernet application without special hermetic packaging.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser reliability; laser variables measurement; optical communication equipment; optical fabrication; optical fibre LAN; photoluminescence; quantum well lasers; semiconductor growth; 1.08 V; 1.3 mum; 10 Gbit; 10 Gbit/s; 11.4 GHz; 120 degC; 1500 h; 20 to 80 degC; 40 mA; 6.8 mA; 72 K; 80 mA; 85 degC; Ethernet; InGaAsP; InGaAsP strain-compensated MQW BH laser; InP substrate; PRBS; aging test; characteristic temperature; modulation bandwidth; photoluminescence; reliability; selective metal-organic chemical vapor epitaxy; slope efficiency; threshold current; Chemical lasers; Diode lasers; Epitaxial growth; Indium phosphide; Optical device fabrication; Photoluminescence; Quantum well devices; Substrates; Temperature; Testing; Buried heterostructure (BH); InGaAsP; laser diodes (LDs); patterned substrate;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2006.875959