Title :
Sidegating characteristics as a function of distance and dose for implanted and metallic sidegates on proton-isolated GaAs
Author :
Rao, H.V. ; Wolf, M.A.
Author_Institution :
Tachonics Corp., Plainsboro, NJ, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
Sidegating characteristics have been measured on MESFETs as a function of sidegate distances ranging from 3 to 570 μm and proton isolation doses ranging from 0 to 5×1014 atoms/cm2 . In addition, the composition of the sidegate is shown to be a significant factor in modulating saturated transistor current
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; III-V semiconductor; MESFETs; metallic sidegates; proton isolation doses; saturated transistor current modulation; sidegate distances; sidegating characteristic; CMOS process; Capacitance; Contact resistance; Degradation; Electrical resistance measurement; MOS devices; MOSFETs; Propagation delay; Ring oscillators; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
