Title :
The effect of channel boron implants on electron mobility in NMOSFET´s
Author_Institution :
Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
The Hall mobilities and Hall concentrations of channel electrons in boron-implanted NMOSFETs were measured at 77 and 300 K. At both temperatures, the mobilities were found to decrease with increasing implantation dose (1011-1012 cm-2) only for electron concentrations <2×1012 cm-2, the effect being more pronounced at 77 K. It is suggested that the mobility degradation is mainly due to impurity scattering
Keywords :
Hall effect; boron; carrier mobility; elemental semiconductors; impurity scattering; insulated gate field effect transistors; ion implantation; semiconductor doping; silicon; 300 K; 77 K; B channel implants; Hall concentrations; Hall mobilities; MOSFET; NMOSFETs; Si:B; channel electrons; electron mobility; implantation dose; impurity scattering; mobility degradation; n-channel device; semiconductors; Annealing; Boron; Degradation; Electron mobility; Hall effect; Implants; Impurities; MOSFET circuits; Scattering; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
