DocumentCode :
1016954
Title :
Transition region properties of reverse-biased diffused p-n junctions
Author :
Cohen, Jerrold
Author_Institution :
Hughes Products, Newport Beach, Calif.
Volume :
8
Issue :
5
fYear :
1961
Firstpage :
362
Lastpage :
369
Abstract :
Poisson´s equation is solved for two common types of diffused p-n junctions in a manner similar to that of previous authors. By a suitable transformation, the field in the junction and capacitance-voltage relation for all junctions are shown to be presentable as a single family of curves with no approximation other than the assumption of negligible drift field. The abrupt and graded regions are discussed in detail. The zero-bias potential and capacitance are also discussed.
Keywords :
Capacitance; Capacitance-voltage characteristics; Cities and towns; Doping; Electron devices; Gaussian distribution; Impurities; Neodymium; P-n junctions; Permittivity; Poisson equations; Semiconductor diodes; Semiconductor impurities; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1961.14813
Filename :
1472976
Link To Document :
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