DocumentCode :
1016973
Title :
A treatment of diffusion errors affecting junction depth
Author :
Reynolds, J.E.
Author_Institution :
Motorola Inc., Phoenix, Ariz.
Volume :
8
Issue :
5
fYear :
1961
Firstpage :
377
Lastpage :
381
Abstract :
An error treatment of the diffusion variables of time t, temperature T, and starting resistivity ρ, has been made in regard to their effects upon junction depth. An analytical equation has been derived for engineering usage in determining the per cent error in junction depth x : Per cent error in junction depth = 100 \\sqrt {frac{\\bar{\\Delta t^{2}}{2t}} +frac{\\bar{Q\\Delta T}^{2}}{2RT^{2}}+\\bar{frac{\\sqrt {\\pi DT}}{\\\\muq p^{2}N_{s}x}. \\Delta \\rho \\exp (x^{2}/4Dt)}} A sample calculation using the above equation is presented along with a method of estimating errors in junction depth due to heating and cooling in the diffusion cycle.
Keywords :
Boundary conditions; Chemical analysis; Chemical industry; Conducting materials; Conductivity; Contamination; Diffusion processes; Equations; Error correction; P-n junctions; Semiconductor device manufacture; Solid state circuits; Temperature; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1961.14815
Filename :
1472978
Link To Document :
بازگشت