DocumentCode
1017175
Title
Effect of surface recombination and channel on diode and transistor characteristics
Author
Sah, C.T.
Author_Institution
Fairchild Semiconductor Corp., Mountain View, Calif.
Volume
8
Issue
5
fYear
1961
Firstpage
424
Lastpage
425
Keywords
Cameras; Chemicals; Circuits; Electrodes; Electron emission; Gallium arsenide; Germanium; Ice; P-i-n diodes; Probability distribution; Protection; Pulse modulation; Radiative recombination; Semiconductor diodes; Silicon alloys; Surface treatment; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1961.14835
Filename
1472998
Link To Document