Title :
Low-current behavior of silicon transistors
Author :
Iwersen, J.E. ; Bray, A.R.
Author_Institution :
Bell Telephone Labs., Inc., Murray Hill, N.J.
Keywords :
Breakdown voltage; Current measurement; Diodes; Electrodes; Energy measurement; Geometry; Impurities; P-n junctions; Pins; Protection; Silicon; Silicon alloys; Switches; Telephony; Temperature; Testing; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14839
