Title :
Recombination current in forward-biased p-n junctions
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
An analytical expression for the recombination current in a forward-biased p-n junction is derived and it is shown that formulas given for the recombination current in most textbooks overestimate the recombination current by a large factor of the order of (Vbi-V)/Vth where V bi is the built-in voltage, V is the applied forward-bias voltage, and Vth is the thermal voltage
Keywords :
electron-hole recombination; p-n junctions; analytical expression; built-in voltage; forward-bias voltage; forward-biased p-n junctions; recombination current; semiconductor junctions; thermal voltage; Boron; Degradation; Electron mobility; Electron traps; Impurities; P-n junctions; Phonons; Rough surfaces; Scattering; Surface roughness;
Journal_Title :
Electron Devices, IEEE Transactions on
