Title :
Gallium arsenide alloy diodes
Author :
Quist, T.M. ; Rediker, R.H.
Author_Institution :
Lincoln Lab., Mass. Inst. Tech., Lexington, Mass.
Keywords :
Alloying; Bonding; Diodes; Fabrication; Frequency; Gallium alloys; Gallium arsenide; Germanium; Indium; Low voltage; Magnetic field measurement; P-n junctions; Semiconductor diodes; Switches; Temperature; Tunneling; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1961.14843
