DocumentCode
1017262
Title
Room temperature operation of an in-plane half-adder based on ballistic Y-junctions
Author
Reitzenstein, S. ; Worschech, L. ; Forchel, A.
Author_Institution
Univ. Wurzburg, Germany
Volume
25
Issue
7
fYear
2004
fDate
7/1/2004 12:00:00 AM
Firstpage
462
Lastpage
464
Abstract
We have realized an in-plane half-adder (HA) structure based on monolithically interconnected GaAs-AlGaAs Y-branched nanojunctions. A self-switching effect of the junction from an internal gating regime to a regime dominated by the ballistic injection of electrons from different terminals is observed at room temperature and exploited to demonstrate HA operation.
Keywords
III-V semiconductors; adders; aluminium compounds; semiconductor junctions; GaAs-AlGaAs; ballistic Y-junctions; ballistic electron injection; half-adder; internal gating regime; nanojunctions; room temperature; self-switching effect; Electrons; Fabrication; Helium; Integrated circuit interconnections; Logic circuits; Logic devices; Nanostructures; Temperature; Threshold voltage; Transistors; Ballistic; HA; Y-branch; half-adder; self-switching;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.831225
Filename
1308420
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