• DocumentCode
    1017291
  • Title

    Discharge mechanisms in floating-gate e.p.r.o.m. cells

  • Author

    Davis, J.R.

  • Author_Institution
    Post Office Research Centre, Ipswich, UK
  • Volume
    15
  • Issue
    1
  • fYear
    1979
  • Firstpage
    20
  • Lastpage
    21
  • Abstract
    Measurements of charge loss from floating-gate e.p.r.o.m. cells have been made at low temperatures by applying terminal voltages to accelerate the discharge. The results strongly suggest that the operative mechanism is electronic tunnelling, implying that it is not possible to make a simple Arrhenius extrapolation from high-temperature storage experiments to service conditions.
  • Keywords
    field effect integrated circuits; integrated memory circuits; read-only storage; discharge mechanisms; electronic tunnelling; floating gate EPROM cells; low temperature discharge rate measurements;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790015
  • Filename
    4255978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017291