• DocumentCode
    1017480
  • Title

    Electron-beam annealing of ion-implanted silicon

  • Author

    McMahon, Richard A. ; Ahmed, Hameeza

  • Author_Institution
    Cambridge University, Engineering Department, Cambridge, UK
  • Volume
    15
  • Issue
    2
  • fYear
    1979
  • Firstpage
    45
  • Lastpage
    47
  • Abstract
    A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure.
  • Keywords
    annealing; electron beam applications; ion implantation; silicon; electron beam annealing; ion implanted Si; scanning electron beam zapping system;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790032
  • Filename
    4255996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017480