Title :
Changes in the thermal oxidation of gallium arsenide induced by ion implantation
Author :
Butcher, D.N. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
Abstract :
The effect of ion implantation on the growth of oxides formed on gallium arsenide in oxygen at 510°C for 2¿ h has been studied. Thirteen ion species were implanted at doses of 1×1015 ions cm¿2. Potassium, nitrogen and fluorine produced significant increases in oxidation, whereas calcium, aluminium and nickel had the opposite effect.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; nitrogen; oxidation; potassium; GaAs; ion implantation effects; thermal oxidation rate changes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790036
