Title :
Nonlinearity of d.h. GaAlAs lasers
Author :
Stubkjr, Kristian Elmholdt
Author_Institution :
Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
Abstract :
Experimental investigation of the relative second- and third-harmonic distortion in d.h. semiconductor lasers is presented. The results are compared to the harmonic distortion predicted from simple rate equations. It is suggested that nearfield instabilities limit the minimum distortion level.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical harmonic generation; semiconductor junction lasers; DH GaAlAs lasers; harmonic distortion; nearfield instabilities; nonlinearity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790044
