Author_Institution :
University of Pennsylvania, Systems Engineering Department & Valley Forge Research Center, Moore School of Electrical Engineering, Philadelphia, USA
Keywords :
III-V semiconductors; carrier mobility; conduction bands; effective mass (band structure); gallium arsenide; gallium compounds; indium compounds; many-valley semiconductors; GAMMA conduction band; Ga1-xInxP1-yAsy; GaAs; alloy scattering; central valley effective mass; electrons; static velocity field characteristic; transient drift velocity;
