• DocumentCode
    1017971
  • Title

    Extremely narrow linewidth ( approximately 1 MHz) and high-power DFB lasers grown by MOVPE

  • Author

    Kondo, Yuta ; Sato, Kiminori ; Nakao, Masahiro ; Fukuda, Motohisa ; Oe, Katsutoshi

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    175
  • Lastpage
    177
  • Abstract
    A suitable structure of narrow linewidth DFB laser is studied experimentally. By thinning the active layer to around 0.07 mu m, controlling kappa L to 1.0, and improving the geometrical uniformity of active region, the linewidth less than 1 MHz is achieved at an output power of around 20 mW in 1.55 mu m DFB lasers with 1.2 mm long cavity length.
  • Keywords
    distributed feedback lasers; semiconductor junction lasers; vapour phase epitaxial growth; 0.07 micron; 1.55 micron; 20 mW; active layer; cavity length; geometrical uniformity; linewidth; narrow linewidth DFB laser; output power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890128
  • Filename
    130848
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017971