Title :
Novel microwave GaAs field-effect transistors
Author :
Vokes, J.C. ; Hughes, B.T. ; Wight, D.R. ; Dawsey, J.R. ; Shrubb, S.J.W.
Author_Institution :
Royal Signals and Radar Establishment, Baldock, UK
Abstract :
A technology is described for the fabrication of Schottky-barrier f.e.t.s with electrodes on either or both sides of a submicrometre thick single-crystal layer of GaAs. Preliminary d.c. and microwave results are given together with possible advantages of these novel f.e.t. structures.
Keywords :
Schottky gate field effect transistors; solid-state microwave devices; GaAs MESFET; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790447
