• DocumentCode
    1018103
  • Title

    Novel microwave GaAs field-effect transistors

  • Author

    Vokes, J.C. ; Hughes, B.T. ; Wight, D.R. ; Dawsey, J.R. ; Shrubb, S.J.W.

  • Author_Institution
    Royal Signals and Radar Establishment, Baldock, UK
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    627
  • Lastpage
    629
  • Abstract
    A technology is described for the fabrication of Schottky-barrier f.e.t.s with electrodes on either or both sides of a submicrometre thick single-crystal layer of GaAs. Preliminary d.c. and microwave results are given together with possible advantages of these novel f.e.t. structures.
  • Keywords
    Schottky gate field effect transistors; solid-state microwave devices; GaAs MESFET; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790447
  • Filename
    4256060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018103