• DocumentCode
    1018947
  • Title

    Low-bandgap (1.15 eV) InGaP/InGaAs solar cell

  • Author

    Saxena, R.R. ; Moon, R.L.

  • Author_Institution
    Varian Associates, Inc., Solid State Laboratory, Palo Alto, USA
  • Volume
    15
  • Issue
    25
  • fYear
    1979
  • Firstpage
    826
  • Lastpage
    827
  • Abstract
    The possibility of using In0.18Ga0.82As p-n junctions as a low-bandgap (1.15 eV) solar cell has been investigated. With a lattice-matched p+ In0.6Ga0.4P window layer, internal collection efficiency close to 100% has been demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; solar cells; InGap-InGaAs; Solar cell; conversion efficiency; internal collection efficiency; lattice matched InGaP window layer; low bandgap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790587
  • Filename
    4256150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018947