Title :
Improved high-frequency response of InGaAsP double-channel buried-heterostructure lasers
Author :
Valster, A. ; Meuleman, L.J. ; Kuindersma, P.I. ; Dongen, T.V.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Abstract :
Several modifications of the InGaAsP double-channel buried-heterostructure laser diode are described with reduced parasitic capacitances in order to improve the modulation speed of the laser chip. The parasitic capacitances of the various devices are measured and the data are described in terms of an improved microwave circuit model for BH lasers. A modulation bandwidth of more than 3 GHz is experimentally obtained by means of proton isolation of the laser chip outside the active region.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; InGaAsP double-channel buried-heterostructure lasers; high-frequency response; laser chip; laser diode; microwave circuit model; modulation bandwidth; modulation speed; parasitic capacitances; proton isolation; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860011
