• DocumentCode
    1019158
  • Title

    Equivalent circuit and ECL ring oscillators of graded-bandgap base GaAs/AlGaAs HBTs

  • Author

    Yamauchi, Yuji ; Ishibashi, Takayuki

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    22
  • Issue
    1
  • fYear
    1986
  • Firstpage
    18
  • Lastpage
    20
  • Abstract
    Equivalent circuit parameters of graded-bandgap base GaAs/AlGaAs heterojunction bipolar transistors are derived by analysing static and microwave characteristics. Here, the estimated base transit time of 1.4 ps indicates that the average electron velocity is enhanced under the built-in field of the graded base. Additionally, ECL ring oscillators are simulated using the obtained parameters. The simulated propagation delay time of ECL gates agrees well with an experimental result of as short as 65 ps/gate.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistor circuits; bipolar transistors; emitter-coupled logic; equivalent circuits; gallium arsenide; logic gates; semiconductor device models; ECL gates; ECL ring oscillators; GaAs/AlGaAs heterojunction bipolar transistors; base transit time; built-in field; electron velocity; equivalent circuit analysis; graded-bandgap base; microwave characteristics; propagation delay time; simulation; static characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860012
  • Filename
    4256170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019158