Title :
P-N-P variable capacitance diode theory
Author_Institution :
Raytheon Company, Mountain View, Calif.
Abstract :
The symmetrical p-n-p structure may, under certain conditions, exhibit an effective nonlinear capacitance. These conditions are derived making use of Baker´s method of charge analysis. The nonlinearity is essentially due to the nonconstancy of the reverse current of each junction, brought about by properly doping the depletion layer space charge regions.
Keywords :
Capacitance; Diodes; Doping; Electron devices; Electron emission; Electrons; Frequency; Helium; Impedance; P-n junctions; Resistors; Semiconductor diodes; Solid state circuits; Space charge; Statistics; Switching circuits; Transient response; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15026
