Title :
Shallow donor impurities in InP bulk crystals grown by the synthesis, solute-diffusion technique
Author :
Kubota, E. ; Katsui, A. ; Yamada, Shigeru
Author_Institution :
NTT Ibaraki Electrical Communication Laboratory, Tokai, Japan
Abstract :
Far-infra-red photoconductivity measurements are used to study residual shallow donor species in InP bulk crystals grown by the synthesis, solute-diffusion technique. The observation of 1s-2p, m =+ 1 Zeeman transitions between the shallow donor-impurity states reveals that two dominant residual donors are included in the InP bulk crystals having carrier concentrations of less than 1 × 1015 cm¿3 The donors are tentatively identified as Si and S.
Keywords :
III-V semiconductors; impurity electron states; indium compounds; infrared spectra of inorganic solids; magnetoabsorption; photoconductivity; InP; S; Si; Zeeman transitions; carrier concentrations; residual donors; shallow donor-impurity states;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860014
