Title :
Electrical characteristics of silicon MOS structure formed by a novel low-temperature thermal oxidation method
Author :
Yue, J.-H. ; Uchida, Y. ; Matsumura, M.
Author_Institution :
Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, Tokyo, Japan
Abstract :
Electrical characteristics of the native silicon-dioxide layer and its interface formed by a novel low-temperature thermal oxidation method have been evaluated. The resistivity and breakdown field strength were more than 1014 ¿cm and 4 MV/cm, respectively. The interface state density had a V-shaped distribution form and its minimum value was about 1011 cm2 eV.
Keywords :
aluminium; electric breakdown of solids; elemental semiconductors; interface electron states; metal-insulator-semiconductor structures; oxidation; silicon; silicon compounds; Al-SiO2-Si; HF C/V characteristics; MOS structure; V-shaped distribution; breakdown field strength; electrical characteristics; elemental semiconductors; interface state density; low-temperature thermal oxidation; resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860024
