Title :
The metal-base transistor
Author_Institution :
Stanford Research Institute, Menlo Park, Calif.
Keywords :
1f noise; Circuit noise; Flexible printed circuits; Fluctuations; Frequency; Hot carriers; Laboratories; Low-frequency noise; Noise generators; Noise level; Noise reduction; Semiconductor device noise; Semiconductor films; Signal to noise ratio; Surface fitting; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15049
