Title :
Above 10 GHz frequency dividers with GaAs advanced saint and air-bridge technology
Author :
Enoki, T. ; Yamasaki, K. ; Osafune, K. ; Ohwada, K.
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
GaAs advanced SAINT without excess gate metal overlap on the dielectric film and air-bridge technology are applied to dual-clocked BFL M/S binary frequency dividers. Operation above 10 GHz is achieved owing to reduction of gate parasitic capacitances and parasitic capacitances between interlayer lines.
Keywords :
III-V semiconductors; field effect integrated circuits; frequency dividers; gallium arsenide; microwave integrated circuits; GaAs advanced SAINT; air-bridge technology; dielectric film; dual-clocked BFL M/S binary frequency dividers; gate metal overlap; gate parasitic capacitances; inter-layer lines;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860046
