• DocumentCode
    1019526
  • Title

    Conduction properties of the Au-n-type Si Schottky barrier

  • Author

    Kahng, D.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    510
  • Lastpage
    510
  • Keywords
    Capacitance; Doping; Electron devices; Electrons; Gallium arsenide; Gold; Impurities; Laboratories; Optical distortion; Schottky barriers; Schottky diodes; Semiconductor process modeling; Silicon; Temperature; Thermal conductivity; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15060
  • Filename
    1473288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019526