Title :
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
Author :
Olsen, Sarah H. ; O´Neill, Anthony G. ; Driscoll, Luke S. ; Chattopadhyay, Sanatan ; Kwa, Kelvin S.K. ; Waite, Andrew M. ; Tang, Yue T. ; Evans, Alan G R ; Zhang, Jing
Author_Institution :
Sch. of Electr. Electron., & Comput. Eng., Univ. of Newcastle, UK
fDate :
7/1/2004 12:00:00 AM
Abstract :
On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition. Performance gains in terms of on-state drain current and maximum transconductance of up to 220% are demonstrated for strained-Si-SiGe devices compared with Si controls. Device performance is found to peak using a virtual substrate composition of Si0.75Ge0.25. MOSFET fabrication used high thermal budget processing and good gate oxide quality has been maintained for virtual substrates having Ge compositions up to 30%. Off-state characteristics are found to be more sensitive to strain relaxation than on-state characteristics.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; electron backscattering; nanotechnology; semiconductor device models; silicon-on-insulator; MOS devices; Monte Carlo methods; back-scattering; ballistic transport; double-gate MOSFET; electron scattering; nanotechnology; nonequilibrium transport; semiconductor device modeling; silicon-on-insulator; ultrashort-channel transistors; CMOS technology; Capacitive sensors; Fabrication; Germanium alloys; Germanium silicon alloys; MOSFET circuits; Performance gain; Silicon germanium; Strain control; Transconductance; Drain current enhancement; SiGe; mobility enhancement; n-MOSFETs; silicon-germanium; strained-Silicon; thermal budget; transconductance enhancement; virtual substrate;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.830656
