Title :
Hot-electron injection by graded AlxGa1-xAs
Author :
Long, A.P. ; Beaton, P.H. ; Kelly, Michael J. ; Kerr, T.M.
Author_Institution :
GEC Research Limited, Hirst Research Centre, Wembley, UK
Abstract :
Triangular barriers of AlxGa1-xAs are used as hot-electron injectors. The AlxGa1-xAs, is linearly graded from x=0 to 0.2 or 0.3 over distances of order 500 Å to provide barriers in the range 200 to 300 meV. In the present application the barrier forms the injector of a hot-electron spectrometer.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; semiconductor diodes; AlxGa1-xAs triangular barriers; III-V semiconductor; graded gap diodes; hot-electron injectors; hot-electron spectrometer; linear grading; planar doped barrier diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860091
