Title :
Injection locking of a 1.3 μm laser diode to an LiNdP4O12 laser yields narrow linewidth emission
Author :
Telle, Harald R.
Author_Institution :
Physikalsich-Technische Bundesanstalt, Braunschweig, West Germany
Abstract :
A multi-longitudinal-mode InGaAsP laser diode was injection-locked to a low-power LiNdP4O12 laser operating at 1.319 μm. A net gain of 24 dB was measured with -28 dBm of injection power. The beat spectrum between the acousto-optically frequency-shifted LiNdP4O12 laser output and the laser diode output displays a 40 dB carrier to pedestal ratio (in 300 kHz bandwidth) under these conditions.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mode locking; lithium compounds; neodymium compounds; semiconductor junction lasers; solid lasers; spectral line breadth; InGaAsP laser diode; acoustooptic frequency shift; beat spectrum; injection locking; narrow linewidth emission; net gain 24 dB; semiconductor laser; wavelength 1.3 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860105
