Title :
GaAs IC fabrication using a novel open-tube sulphur diffusion technique
Author :
Oren, M. ; Prince, F.C.
Author_Institution :
GTE Laboratories Inc., Waltham, USA
Abstract :
High-transconductance (gm) GaAs FETs and ring oscillators were fabricated using a novel open-tube sulphur diffusion method to form the active layer in a 2 in (51 mm) LEC wafer. Extrinsic transconductances as high as 200 mS/mm were obtained on 2 ¿m-gate FETs. A DCFL ring oscillator, fabricated with 2 ¿m-gate FETs, had 54 ps gate delay at room temperature. This diffusion technique was found to be suitable for GaAs IC fabrication.
Keywords :
III-V semiconductors; diffusion in solids; field effect integrated circuits; gallium arsenide; integrated circuit technology; semiconductor doping; sulphur; 2 micron gate FET; DCFL ring oscillator; GaAs IC fabrication; GaAs:S; III-V semiconductors; LEC wafer; S dopant; monolithic IC; open-tube diffusion technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860154
