Title :
Double-Sided, Double-Type-Column 3-D Detectors: Design, Fabrication, and Technology Evaluation
Author :
Zoboli, Andrea ; Boscardin, Maurizio ; Bosisio, Luciano ; Dalla Betta, Gian-Franco ; Piemonte, Claudio ; Ronchin, Sabina ; Zorzi, Nicola
Author_Institution :
Sezione di Padova, INFN, Trento
Abstract :
We report on the latest results from the development of 3-D silicon radiation detectors at Fondazione Bruno Kessler of Trento (FBK), Italy (formerly ITC-IRST). Building on the results obtained from previous devices (3-D Single-Type-Column), a new detector concept has been defined, namely 3-D-DDTC (Double-sided Double-Type Column), which involves columnar electrodes of both doping types, etched from alternate wafer sides, stopping a short distance (d) from the opposite surface. Simulations prove that, if d is kept small with respect to the wafer thickness, this approach can yield charge collection properties comparable to those of standard 3-D detectors, with the advantage of a simpler fabrication process. Two wafer layouts have been designed with reference to this technology, and two fabrication runs have been performed. Technological and design aspects are reported in this paper, along with simulation results and initial results from the characterization of detectors and test structures belonging to the first 3-D-DDTC batch.
Keywords :
etching; semiconductor doping; silicon radiation detectors; columnar electrodes; doping; double-sided double-type-column 3D silicon radiation detectors; etching; wafer thickness; Doping; Electrodes; Etching; Fabrication; Neutrons; Numerical simulation; Object detection; Radiation detectors; Silicon radiation detectors; Testing; 3-D technology; DRIE; numerical simulations; silicon radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2002885