Title :
InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition
Author :
Dupuis, R.D. ; Velebir, J.R. ; Campbell, J.C. ; Qua, G.J.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, `grading¿ and multiplication regions (SAGMAPDs) have been fabricated for the first tune from wafers grown by metalorganic chemical vapour deposition (MOCVD) These APDs exhibit low dark current (¿ 32 nA at 90% breakdown) and high-speed pulse response (¿ 100 ps FWHM).
Keywords :
III-V semiconductors; avalanche photodiodes; chemical vapour deposition; optical communication equipment; semiconductor growth; vapour phase epitaxial growth; APDs; CVD; III-V semiconductors; InP/InGaAsP/InGaAs; MOCVD; VPE; avalanche photodiodes; epitaxial growth; high-speed pulse response; low dark current; metalorganic chemical vapour deposition; multiplication regions; optical communication equipment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860161
