Title :
Schottky barriers on p-type gallium arsenide prepared by molecular beam epitaxy
Author :
Missous, Mohamed ; Rhoderick, E.H. ; Singer, K.E.
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Abstract :
Rectifying contacts have been made by depositing epitaxial films of aluminium and antimony on p-type gallium arsenide by molecular beam epitaxy. The I/V and C/V characteristics were almost ideal. The barrier heights determined from the 1/V characteristics were 0.64 eV for aluminium and 0.66 eV for antimony. The significance of these results is briefly discussed.
Keywords :
III-V semiconductors; Schottky effect; aluminium; antimony; electrical contacts; gallium arsenide; metallic epitaxial layers; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor-metal boundaries; Al film; C/ V characteristics; I/ V characteristics; III-V semiconductors; MBE; Sb film; Schottky barriers; epitaxial films; molecular beam epitaxy; p-type; rectifying contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860165
