Title :
Optical switching of a GaAs triangular barrier switch grown by MBE
Author :
Rees, P.K. ; Parker, D.G. ; Barnard, J.A.
Author_Institution :
GEC Research Ltd., Hirst Research Centre, Wembley, UK
Abstract :
A 100 ¿m-diameter GaAs triangular barrier switch (TBS) has been optically switched using a GaAlAs laser diode. The resulting transient response has been measured to have a leading edge of ~ 295 ps.
Keywords :
III-V semiconductors; molecular beam epitaxial growth; optical elements; optoelectronic devices; semiconductor epitaxial layers; semiconductor growth; transient response; GaAlAs laser diode; GaAs triangular barrier switch; optical switching; transient response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860182
