Title :
Excess noise in field effect transistors
Author :
van der Ziel, A.
fDate :
9/1/1963 12:00:00 AM
Keywords :
FETs; Fabry-Perot; Gallium arsenide; Glass; Laboratories; Laser beams; Laser modes; Laser noise; Low-frequency noise; Semiconductor device noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1963.15223
