Title :
Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistors
Author :
Wang, Huifang ; Ankri, D.
Author_Institution :
Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Bagneux, France
Abstract :
The first monolithic integrated photodetector-preamplifier implemented with GaAs/GaAlAs heterojunction phototransistor and transistors has been fabricated and tested. This photoreceiver has been designed for local networks of optical transmission links operating at 0.85 ¿m wavelength with multimode fibres. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBTs) and four resistors are integrated in a 0.5 × 0.5 mm2 GaAs chip. The photoreceiver with a 26 k¿ external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000 V/A. The noise measurements indicate that a minimum detectable power of ¿30 dBm is obtained at 140 Mbit/s for an error rate of 10¿9.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; optical fibres; phototransistors; receivers; 0.85 micron wavelength; 140 Mbit/s; GaAs chip; GaAs/GaAlAs; III-V semiconductors; bipolar transistors; heterojunction; integrated optoelectronics; local networks; monolithic IC; monolithic integrated photodetector; multimode fibres; optical communication equipment; optical transmission links; photoreceiver; phototransistor; preamplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860266
