MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

Author

Scheiber, Helmut ; Lübke, Kurt ; Grützmacher, D. ; Diskus, Christian G. ; Thim, Hartwig W.

Author_Institution

Inst. fuer Mikroelektronik, Linz Univ., Austria

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2093

Lastpage

2098

Abstract

A MIMIC-(millimeter wave monolithic integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW)

Keywords

Gunn oscillators; III-V semiconductors; MMIC; field effect devices; gallium arsenide; indium compounds; negative resistance; 29 GHz; 30 to 56 mW; 34 GHz; EHF; GaAs; III-V semiconductors; InP; MESFET channel; MIMIC-compatible; MM-wave IC; TED oscillator; device structure; field effect controlled TED; frequency-independent negative resistance; microwave oscillator; millimeter wave monolithic integrated circuit; simulation; stationary charge dipole domain; transferred electron oscillator; Doping; Electrons; FETs; Frequency; Gallium arsenide; Indium phosphide; Millimeter wave integrated circuits; Millimeter wave radar; Oscillators; Power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44127

Filename

44127