• DocumentCode
    1022201
  • Title

    Surface-emitting GaAlAs/GaAs laser with etched mirrors

  • Author

    Yang, Jie J. ; Jansen, Maarten ; Sergant, M.

  • Author_Institution
    TRW, Space & Technology Group, Redondo Beach, USA
  • Volume
    22
  • Issue
    8
  • fYear
    1986
  • Firstpage
    438
  • Lastpage
    439
  • Abstract
    A surface-emitting GaAlAs/GaAs laser is fabricated using ion milling to etch the mirrors. Output light is defected to a direction perpendicular to the wafer surface by a monolithically integrated 45° mirror.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; mirrors; semiconductor junction lasers; GaAlAs-GaAs surface emitting laser; etched mirrors; integrated optics; ion milling; output light deflection; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860299
  • Filename
    4256492