Title :
New way of plotting current/voltage characteristics of Schottky diodes
Author :
Missous, M. ; Rhoderick, E.H.
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Abstract :
It is pointed out that the empirical diode relationship I = I0 exp (qV/nkT){1 - exp (-qV/kT)} has the property that a plot of log [I/{1 - exp (-qV/kT)}] against V should be linear for all values of V, including reverse voltages. This equation has been tested by making such a plot for an Al/GaAs Schottky diode made by MBE. The plot is linear over the entire range from +0.5 V to - 1.0 V, with n = 1.01.
Keywords :
Schottky-barrier diodes; semiconductor device models; Al/GaAs Schottky diode; I/V plots; MBE; Schottky diodes; empirical diode relationship; logarithmic plot; plotting current/voltage characteristics; reverse voltages;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860324
