Title :
PECVD SiO2film as a junction isolation for all refractory Josephson IC
Author :
Kosaka, S. ; Shoji, A. ; Aoyagi, M. ; Sakamoto, Y. ; Shinoki, F. ; Hayakawa, H.
Author_Institution :
Electrotechnical Laboratory, Ibaraki, Japan
fDate :
3/1/1987 12:00:00 AM
Abstract :
Preparation of SiO2films by using plasma-enhanced chemical vapor-deposition (PECVD) were investigated in order to obtain insulating layers which are applicable to large scale Josephson integrated circuits with high reliability and high production yield. Defect densities of the deposited films were estimated by measuring dielectric breakdown strength distribution of the films and found to be less than 0.5/cm2in films of thickness 100-1000nm range, which is acceptable for the use to Josephson IC with LSI level complexity. The PECVD SiO2films are successfully applied to an integration of all refractory Josephson IC.
Keywords :
Dielectric films; Josephson devices; Silicon materials/devices; Chemical products; Dielectrics and electrical insulation; Integrated circuit reliability; Integrated circuit yield; Large scale integration; Optical films; Plasma chemistry; Plasma density; Plasma measurements; Production;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1987.1064865
