Title :
X-band 0.5, 1, and 2 watt power amplifiers with marked improvement in power-added efficiency
Author :
Boesch, Ronald D. ; Thompson, Joyce A.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
Very efficient X-band MESFET power amplifiers, showing greater power-added efficiency over a wider bandwidth than any X-band amplifiers of comparable output reported to date, are discussed. The amplifiers were designed with attention given to optimum bias, proper harmonic termination, and efficient power combining. These device and design issues are discussed, and a straightforward design method which achieved the increased levels of efficiency is described
Keywords :
Schottky gate field effect transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 0.5 to 2 W; MESFET; X-band; design method; harmonic termination; optimum bias; power amplifiers; power combining; power-added efficiency; Bandwidth; Gallium arsenide; Impedance matching; MESFETs; MMICs; Optical amplifiers; Power amplifiers; Power generation; Power measurement; Power system harmonics;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
