• DocumentCode
    1022906
  • Title

    Natural linewidth of semiconductor lasers

  • Author

    Arnaud, Jerome

  • Author_Institution
    USTL, Equipe de Microoptoélectronique de Montpellier, Unitée associée au CNRS, Montpellier, France
  • Volume
    22
  • Issue
    10
  • fYear
    1986
  • Firstpage
    538
  • Lastpage
    540
  • Abstract
    A formula is given for the natural linewidth of high-gain lasers, which is applicable to arbitrary three-dimensional geometries. This formula agrees with Petermann´s result for lasers with transversely inhomogeneous gains (K-factor) and with previous results for the effect of small mirror reflectivities. It does not agree with the Schawlow-Townes (ST) formula used by most authors in evaluating the ¿=¿nr/¿ni factor of conventional semiconductor lasers. The difference between the two formulas is significant when the mirror power reflectivity is less than about 0.6. Furthermore, the modified formula gives directly the linewidth of lasers coupled to long external cavities. Saturation effects, however, are neglected in this letter.
  • Keywords
    laser theory; semiconductor junction lasers; spectral line breadth; arbitrary three-dimensional geometries; high-gain lasers; long external cavities; mirror power reflectivity; natural linewidth; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860367
  • Filename
    4256562