DocumentCode
1022906
Title
Natural linewidth of semiconductor lasers
Author
Arnaud, Jerome
Author_Institution
USTL, Equipe de Microoptoélectronique de Montpellier, Unitée associée au CNRS, Montpellier, France
Volume
22
Issue
10
fYear
1986
Firstpage
538
Lastpage
540
Abstract
A formula is given for the natural linewidth of high-gain lasers, which is applicable to arbitrary three-dimensional geometries. This formula agrees with Petermann´s result for lasers with transversely inhomogeneous gains (K-factor) and with previous results for the effect of small mirror reflectivities. It does not agree with the Schawlow-Townes (ST) formula used by most authors in evaluating the ¿=¿nr/¿ni factor of conventional semiconductor lasers. The difference between the two formulas is significant when the mirror power reflectivity is less than about 0.6. Furthermore, the modified formula gives directly the linewidth of lasers coupled to long external cavities. Saturation effects, however, are neglected in this letter.
Keywords
laser theory; semiconductor junction lasers; spectral line breadth; arbitrary three-dimensional geometries; high-gain lasers; long external cavities; mirror power reflectivity; natural linewidth; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860367
Filename
4256562
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