Title :
Four-terminal field-effect transistors
Author :
Cobbold, R.S.C. ; Trofimenkoff, F.N.
Author_Institution :
University of Saskatchewan, Saskatoon, Canada
fDate :
5/1/1965 12:00:00 AM
Abstract :
A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF.
Keywords :
Doping profiles; Electron devices; Equations; FETs; Frequency; Impurities; Silicon devices; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15488