• DocumentCode
    1023769
  • Title

    Monolithic superconductor-base hot-electron transistors with large current gain

  • Author

    Kobayashi, Takehiko ; Sakai, Hiroki ; Tonouchi, Masayoshi

  • Author_Institution
    Osaka University, Faculty of Engineering Science, Toyonaka, Japan
  • Volume
    22
  • Issue
    12
  • fYear
    1986
  • Firstpage
    659
  • Lastpage
    661
  • Abstract
    A GaAs/Nb/InSb monolithic metal-base hot-electron transistor was newly developed and its transistor action was investigated. The common-base current amplification factor as high as 0.8 was attained for a 200 ¿-thick Nb base when the device was cooled down to the cryogenic temperature.
  • Keywords
    III-V semiconductors; bipolar transistors; cryogenics; gallium arsenide; hot carriers; indium antimonide; superconducting devices; GaAs/Nb/InSb; III-V semiconductor; Nb base; bipolar transistors; cryogenic temperature; hot-electron transistors; large current gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860451
  • Filename
    4256649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1023769