DocumentCode
1024126
Title
Effect of deposition temperature on LPCVD polysilicon
Author
French, P.J.
Author_Institution
University of Southampton, Department of Electronics & Information Engineering, Southampton, UK
Volume
22
Issue
13
fYear
1986
Firstpage
716
Lastpage
718
Abstract
The electrical properties of LPCVD silicon are shown to be optimised for microelectronic applications by depositing the films as an amorphous layer and annealing to yield a polycrystalline form. The film resistivity is lowered and the piezoresistive coefficient raised by this technique. These improvements are explained by a simple theory which incorporates trap density and grain size effects and also allows the temperature coefficients of resistance and gauge factor to be calculated.
Keywords
CVD coatings; electronic conduction in crystalline semiconductor thin films; elemental semiconductors; grain size; piezoresistance; silicon; LPCVD; amorphous layer; annealing; deposition temperature; electrical properties; film resistivity; gauge factor; grain size; microelectronic applications; piezoresistive coefficient; polycrystalline Si; polysilicon; semiconductor; temperature coefficients of resistance; trap density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860490
Filename
4256692
Link To Document