• DocumentCode
    1024169
  • Title

    Planar embedded GaInAs photodiode on semi-insulating InP substrate for monolithic integration

  • Author

    Dawe, P.J.G. ; Spear, D.A.H. ; Thompson, G.H.B.

  • Author_Institution
    STC Technology Limited (STL), Harlow, UK
  • Volume
    22
  • Issue
    13
  • fYear
    1986
  • Firstpage
    722
  • Lastpage
    724
  • Abstract
    A back-illuminated planar embedded photodiode designed for integration into a high-bit-rate PINFET 1.2¿1.6 ¿m optical receiver has been fabricated by nonmasked LPE growth on a profiled substrate. A p-n¿-n+ structure provides low series resistance on both p- and n-sides. The electrical and optical performance is good, with a junction capacitance of 70 fF at ¿10 V.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodiodes; receivers; GaInAs photodiode; PINFET; low series resistance; monolithic integration; nonmasked LPE growth; optical performance; optical receiver; p- n-- n+ structure; planar embedded photodiode; semi-insulating InP substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860494
  • Filename
    4256696
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1024169