Title :
Migration rates of alkali ions in thermally-grown SiO2films
Author :
Logan, Jeremy S. ; Kerr, D.R.
fDate :
9/1/1965 12:00:00 AM
Keywords :
Diodes; Electrons; Gallium arsenide; Gunn devices; III-V semiconductor materials; Impurities; Laboratories; Microwave devices; Radar scattering; Telephony;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1965.15549
