DocumentCode
1024453
Title
A model for the charge motion and instability in the metal-silicon oxide-silicon structure
Author
Hofstein, S.R.
Volume
12
Issue
9
fYear
1965
fDate
9/1/1965 12:00:00 AM
Firstpage
504
Lastpage
504
Keywords
Electric variables measurement; Energy measurement; Laboratories; Motion measurement; Oxidation; Pollution measurement; Silicon; Temperature; Voltage; Water pollution;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1965.15555
Filename
1474019
Link To Document